收藏本站
Si7842DP
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Condition
Min.
Typ. b
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 85 °C
Ch-1
Ch-2
Ch-1
Ch-2
0.8
2.4
± 100
1
100
15
2000
V
nA
μA
On-State Drain
Current a
I D(on)
V DS = 5 V, V GS = 10 V
20
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 7.5 A
V GS = 4.5 V, I D = 6.5 A
V DS = 15 V, I D = 7.5 A
0.018
0.024
22
0.022
0.030
Ω
S
Diode Forward Voltage a
V SD
I S = 1 A, V GS = 0 V
Ch-1
Ch-2
0.8
0.47
1.2
0.5
V
Dynamic b
Total Gate Charge
Q g
13
20
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
V DS = 15 V, V GS = 10 V, I D = 7.5 A
2
2.7
nC
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
R g
t d(on)
t r
t d(off)
t f
V DD = 15 V, R L = 15 Ω
I D ? 1 A, V GEN = 10 V, R g = 6 Ω
0.5
1.2
8
10
21
10
3.2
16
20
40
20
Ω
ns
Source-Drain Reverse Recovery
Time
t rr
I F = 1.7 A, dI/dt = 100 A/μs
Ch-1
Ch-2
40
32
80
70
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V F
Test Condition
I F = 1.0 A
I F = 1.0 A, T J = 125 °C
Min.
Typ.
0.47
0.36
Max.
0.50
0.42
Unit
V
V r = 30 V
0.004
0.100
Maximum Reverse Leakage Current
I rm
V r = 30 V, T J = 100 °C
0.7
10
mA
V r = – 30 V, T J = 125 °C
3.0
20
Junction Capacitance
C T
V r = 10 V
50
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71617
S09-0227-Rev. D, 09-Feb-09
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI7846DP-T1-GE3 MOSFET N-CH D-S 150V PPAK 8SOIC
SI7848BDP-T1-E3 MOSFET N-CH D-S 40V PPAK 8SOIC
SI7868ADP-T1-GE3 MOSFET N-CH D-S 20V PPAK 8SOIC
SI7872DP-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI7898DP-T1-GE3 MOSFET N-CH 150V 3A PPAK 8SOIC
SI7904BDN-T1-GE3 MOSFET N-CH DL 20V PPAK 1212-8
SI7905DN-T1-E3 MOSFET DUAL P-CH D-S 40V 1212-8
SI7913DN-T1-GE3 MOSFET P-CH 20V 1212-8 PPAK
相关代理商/技术参数
SI7844DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET
SI7844DP-T1 功能描述:MOSFET 30V 10A 3.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7844DP-T1-E3 功能描述:MOSFET 30V 10A 3.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7844DP-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI7844DP-T1-GE3 功能描述:MOSFET Dual N-Ch PWM Opt. 30V 22mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7846DP 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8
SI7846DP 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8
SI7846DP-T1 功能描述:MOSFET 150V 6.7A 5.2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube